logo

IRGP4750DPbF Datasheet, International Rectifier

IRGP4750DPbF transistor equivalent, insulated gate bipolar transistor.

IRGP4750DPbF Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 652.44KB)

IRGP4750DPbF Datasheet

Features and benefits

Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs complia.

Application


* Industrial Motor Drive
* UPS
* Solar Inverters
* Welding Features Low VCE(ON) and Switching Losses.

Image gallery

IRGP4750DPbF Page 1 IRGP4750DPbF Page 2 IRGP4750DPbF Page 3

TAGS

IRGP4750DPbF
Insulated
Gate
Bipolar
Transistor
International Rectifier

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts